GaN Semiconductors Driving More Efficient Automotive Traction Inverters [Expert View]

Multilevel Inverters for Large Automotive Electric Drives

 Traditional high-frequency pulse width modulation (PWM) inverters for motor drives have several problems associated with their high frequency switching which produces high voltage change (dV/dt) rates. Multilevel inverters solve these problems because their devices switch at the fundamental frequency. Two different multilevel topologies are identified for use as a converter for electric drive...

Efficient Hardware Multiplicative Inverters

We propose two hardware inverters for calculating the multiplicative inverses in finite fields GF (2): one produces a result in every O(m) time using O(m) area; and the other produces a result in every O(1) time using O ( m ) area. While existing O(m)-time inverters require at least two shift registers in the datapath, the proposed O(m)-time implementation uses only one, thus costing less hardw...

Vehicle-level Analysis Technique for EMC Design of Automotive Inverters

Hiroki Funato, Dr. Eng. Jia Li, Dr. Eng. Masayoshi Takahashi, Dr. Eng. Isao Hoda Hideyuki Sakamoto Ryuichi Saito OVERVIEW: To ensure vehicle safety and comfort, there is a need to minimize interference due to electromagnetic noise from automotive electronics. While automotive manufacturers have stipulated EMC standards for this purpose that component suppliers are obliged to comply with, there ...

Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

Enhancementand depletion-mode AlN/GaN HFETs have been fabricated with a subcritical barrier design: a twodimensional electron gas (2DEG) is induced in the highly resistive as-grown heterostructure when a suitable capping material is deposited over the ultrathin AlN barrier. In this bottom-up approach 2DEGs can be locally induced by patterned cap layers on subcritical barrier AlN/GaN heterostruc...

Toward Smart Automotive Headlights for Safe Driving